The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Sep. 06, 2012
Qing Cao, Yorktown Heights, NY (US);
Dechao Guo, Fishkill, NY (US);
Shu-jen Han, Cortlandt Manor, NY (US);
Yu LU, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Qing Cao, Yorktown Heights, NY (US);
Dechao Guo, Fishkill, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Yu Lu, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.