The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Apr. 28, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Dechao Guo, Fishkill, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Yu Lu, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, New York, NY (US);
Assignee:
GlobalFoundries, Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/306 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66045 (2013.01); H01L 21/02527 (2013.01); H01L 21/043 (2013.01); H01L 21/044 (2013.01); H01L 21/30604 (2013.01); H01L 29/1606 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78684 (2013.01); H01L 51/0048 (2013.01); H01L 51/0545 (2013.01);
Abstract
Transistors with self-aligned source/drain regions and methods for making the same. The methods include forming a gate structure embedded in a recess in a substrate; removing substrate material around the gate structure to create self-aligned source and drain recesses; forming a channel layer over the gate structure and the source and drain recesses; and forming source and drain contacts in the source and drain recesses. The source and drain contacts extend above the channel layer.