Tainan, Taiwan

Yu-Chu Lin

USPTO Granted Patents = 34 

Average Co-Inventor Count = 5.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Tainan, TW (2017 - 2024)

Company Filing History:


Years Active: 2017-2025

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34 patents (USPTO):

Title: Innovations by Yu-Chu Lin in Flash Memory Technology

Introduction

Yu-Chu Lin, a prolific inventor based in Tainan, Taiwan, has made significant contributions to the field of flash memory technology. With a remarkable total of 29 patents to his name, his inventions are shaping the future of data storage solutions.

Latest Patents

Among his latest patents, two notable innovations stand out. The first is a "Flash memory device with three-dimensional half flash structure and methods for forming the same." This patent describes a flash memory device placed on a substrate, which includes a floating gate electrode, a tunnel dielectric layer, and a smaller length control gate electrode that enhances performance. The design incorporates a control gate dielectric layer, ensuring efficiency and reliability in data storage.

The second patent, titled "Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same," covers a flash memory device that integrates a floating gate electrode within a substrate semiconductor layer along with an erase gate electrode. This innovative arrangement allows for a two-dimensional array of flash memory cells, optimizing storage capabilities and performance.

Career Highlights

Yu-Chu Lin is an integral part of the Taiwan Semiconductor Manufacturing Company Limited (TSMC), where he leverages his expertise in semiconductor technology to develop cutting-edge flash memory devices. His contributions have propelled advancements in this field, making significant impacts on consumer electronics and data management.

Collaborations

In his professional journey, Yu-Chu Lin has collaborated with esteemed colleagues, including Chi-Chung Jen and Wen-Chih Chiang. Their teamwork fosters an environment of innovation, combining their skills and knowledge to push the boundaries of technology in memory devices.

Conclusion

Yu-Chu Lin's remarkable achievements in the realm of flash memory technology exemplify the spirit of innovation. With a strong portfolio of patents and a commitment to advancing technology, Lin continues to influence the future of data storage solutions through his work at TSMC.

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