The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Feb. 27, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Chu Lin, Tainan, TW;
Wen-Chih Chiang, Hsinchu, TW;
Chi-Chung Jen, Kaohsiung, TW;
Ming-Hong Su, Tainan, TW;
Mei-Chen Su, Kaohsiung, TW;
Chia-Wei Lee, Kaohsiung, TW;
Kuan-Wei Su, Kaohsiung, TW;
Chia-Ming Pan, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.