The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Sep. 28, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Chu Lin, Tainan, TW;
Chi-Chung Jen, Kaohsiung, TW;
Yen-Di Wang, Taipei, TW;
Jia-Yang Ko, Kaohsiung, TW;
Men-Hsi Tsai, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. The semiconductor substrate has a first active region. The first continuous floating gate structure is over the first active region of the semiconductor substrate, wherein the first continuous floating gate structure has first and second inner sidewalls facing each other. The dielectric layer has a first portion extending along the first inner sidewall of the first continuous floating gate structure and a second portion extending along the second inner sidewall of the first continuous floating gate structure. The control gate electrode is over the dielectric layer. The control gate electrode is in contact with the first and second portions of the dielectric layer.