Kaohsiung, Taiwan

Jia-Yang Ko

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2014-2024

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4 patents (USPTO):Explore Patents

Title: Innovations of Jia-Yang Ko

Introduction

Jia-Yang Ko is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on memory devices, which are crucial for modern electronic applications.

Latest Patents

Jia-Yang Ko's latest patents include innovative designs for memory devices. One of his patents describes a memory device that features a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. This design enhances the performance and efficiency of memory storage. Another patent outlines a memory device that includes a semiconductor substrate, a tunneling layer, a floating gate electrode, a dielectric layer, and a control gate electrode. This invention aims to improve the functionality and reliability of memory devices in various applications.

Career Highlights

Jia-Yang Ko is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise in memory devices has positioned him as a key player in the industry.

Collaborations

Throughout his career, Jia-Yang Ko has collaborated with notable colleagues, including Yu-Chu Lin and Chi-Chung Jen. These partnerships have fostered innovation and contributed to the advancement of semiconductor technology.

Conclusion

Jia-Yang Ko's contributions to the field of memory devices highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving electronic performance and reliability.

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