The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Jan. 17, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Chu Lin, Tainan, TW;
Chi-Chung Jen, Kaohsiung, TW;
Yen-Di Wang, Taipei, TW;
Jia-Yang Ko, Kaohsiung, TW;
Men-Hsi Tsai, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a memory device is provided. The method includes depositing a floating gate electrode film over a semiconductor substrate; patterning the floating gate electrode film into at least one floating gate electrode having at least one opening therein; depositing a control gate electrode film over the semiconductor substrate to overfill the at least one opening of the floating gate electrode; and patterning the control gate electrode film into at least one control gate electrode over the floating gate electrode.