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For the Inventor, By the Inventor

Yokkaichi, Japan

Yoshiro Shimojo

This inventor holds 25 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Memory. Top assignees: Toshiba Memory Corporation, Kabushiki Kaisha Toshiba, Kioxia Corporation. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiro Shimojo. Retrieved from https://idiyas.com/inventor/yoshiro-shimojo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 68.0

Average Co-Inventor Count = 1.8

ph-index = 4

Forward Citations = 59(Granted Patents)


Location History:

  • Mie-ken, JP (2014)
  • Yokohama Kanagawa, JP (2021)
  • Yokohama, JP (2005 - 2022)
  • Yokkaichi, JP (2017 - 2024)

Company Filing History:

goldMedal11 out of 2,955 
 
Toshiba Memory Corporation
 patents
silverMedal8 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal6 out of 3,189 
 
Kioxia Corporation
 patents

Years Active: 2005-2025

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Areas of Expertise:
Semiconductor Storage Device
Memory Device
Nonvolatile Memory
Ferro-electric Memory
Three-Dimensional Memory
Manufacturing Method
Charge Storage Member
Conductive Member
Interconnections
Substrate
Capacitor Structure
25 patents (USPTO):Explore Patents
1. 12232325 - Semiconductor storage device (2025-02-18),
2. 12211913 - Semiconductor storage device with improved cutoff characteristics (2025-01-28),
3. 12185539 - Method for manufacturing a semiconductor storage device including a division film (2024-12-31),
4. 12094805 - Semiconductor device and method for manufacturing same (2024-09-17),
5. 12089404 - Semiconductor memory device including a substrate, various interconnections, semiconductor member, charge storage member and a conductive member (2024-09-10),
6. 11552000 - Semiconductor device and method for manufacturing same (2023-01-10),
7. 11222900 - Semiconductor memory device (2022-01-11),
8. 11121147 - Semiconductor storage device (2021-09-14),
9. 10943914 - Semiconductor memory device including a substrate, various interconnections, semiconductor member, charge storage member and a conductive member (2021-03-09),
10. 10854534 - Semiconductor device and method for manufacturing same (2020-12-01),
11. 10672779 - Semiconductor memory device including a substrate, various interconnections, semiconductor member, charge storage member and a conductive member (2020-06-02),
12. 10515873 - Semiconductor device and method for manufacturing same (2019-12-24),
13. 10504918 - Memory device (2019-12-10),
14. 10249639 - Semiconductor memory device (2019-04-02),
15. 10217757 - Semiconductor memory device including a substrate, various interconnections, semiconductor member, charge storage member and a conductive member (2019-02-26),

Title: The Innovative Journey of Yoshiro Shimojo

Introduction: Yoshiro Shimojo, a pioneering inventor hailing from Yokkaichi, Japan, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Shimojo's latest patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to driving innovation in various fields.

Career Highlights: With a career spanning over two decades, Shimojo has established himself as a leading figure in the tech industry, with numerous successful inventions that have revolutionized the way we live and work.

Collaborations: Throughout his career, Shimojo has collaborated with top research institutions, universities, and tech companies to bring his ideas to life. His ability to work across disciplines has led to the development of cutting-edge technologies with real-world applications.

Conclusion: Yoshiro Shimojo's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a visionary inventor. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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