The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Aug. 23, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Yoshiro Shimojo, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); G11C 16/0483 (2013.01); H01L 23/5283 (2013.01); H01L 29/40117 (2019.08); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor storage device includes a first stacked body including first insulating films and first conductive films that are alternately stacked in a first direction. A first columnar body and a second columnar body extend within the first stacked body in the first direction. A second conductive film is provided above the first stacked body, and extends in a third direction intersecting the first direction and the second direction. A third insulator is adjacent to the second conductive film and extends in the third direction. A third conductive film is adjacent to the third insulator and extends in the third direction. A third columnar body is provided on the first columnar body. A fourth columnar body is provided on the second columnar body. A thickness of a third semiconductor portion in the first direction is greater than a thickness of the second conductive film in the first direction.


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