The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Sep. 03, 2019
Toshiba Memory Corporation, Tokyo, JP;
Keisuke Nakatsuka, Kobe Hyogo, JP;
Yoshitaka Kubota, Sagamihara Kanagawa, JP;
Tetsuaki Utsumi, Yokohama Kanagawa, JP;
Yoshiro Shimojo, Yokohama Kanagawa, JP;
Ryota Katsumata, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a contact plug, a memory trench extending between the second conductive layer and the third conductive layer. The memory trench is formed around the contact plug, and surrounds a first area in which the contact plug is disposed. A second area is separated from the first area and includes a pillar penetrating the first conductive layer. The second conductive layer extends between the first and second areas, and is connected to the first conductive layer. The third conductive layer is on the opposite side of the first area to the second area, and is connected to the first conductive layer.