Tokyo, Japan

Yoshio Hagiwara

This inventor holds 20 USPTO granted patents, primarily in Silica Coating Technology. Top assignees: Tokyo Ohka Kogyo Co., Ltd., Ricoh Company, Ltd., Tokyo Ohka Kogyo., Ltd.. Active years: 1979-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshio Hagiwara. Retrieved from https://idiyas.com/inventor/yoshio-hagiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 2.7

ph-index = 7

Forward Citations = 198(Granted Patents)


Location History:

  • Tokyo, JP (1979 - 2004)
  • Tokyo-to, JP (1997 - 2006)
  • Kita-ku, JP (2004 - 2006)
  • Kawasaki, JP (2009)

Company Filing History:


Years Active: 1979-2009

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Areas of Expertise:
Silica Coating
Multilayer Wiring
Coating Solution
Anti-Reflective Coating
Polysilazane
Liquid Composition
Binary Diazo
Interlayer Insulation
20 patents (USPTO):Explore Patents

Title: **The Innovative Mind of Yoshio Hagiwara**

Introduction

Yoshio Hagiwara is a notable inventor based in Tokyo, Japan, recognized for his significant contributions to the field of semiconductor technologies. With an impressive portfolio of 20 patents, Hagiwara has made remarkable advancements that push the boundaries of innovation in electronics.

Latest Patents

Among his latest patents, Hagiwara has developed methods for creating semiconductor multilayer wiring boards and silica-based coatings. One notable invention focuses on forming a silica-based interlayer insulating layer with a low dielectric constant using a SOG material on a substrate. This intricate process includes forming a wiring-layer space, conducting UV ray irradiation if necessary, and creating a Si—OH bond on the insulating layer's surface.

Another revolutionary patent details the formation of a silica-based coating film that serves as a planarizing or interlayer insulating layer. This is achieved through a unique coating solution made from hydrolysis-condensation products of polyalkoxy silane compounds. The innovative approach involves precise steps such as replacing solvents and baking at high temperatures, resulting in a film with a dielectric constant not exceeding 2.5.

Career Highlights

Yoshio Hagiwara has held pivotal roles at leading institutions, including Tokyo Ohka Kogyo Co., Ltd. and Waseda University. His endeavors within these esteemed organizations have significantly influenced the semiconductor landscape, indicating his commitment to advancing technology through innovative research and development.

Collaborations

Throughout his career, Hagiwara has collaborated with prominent figures in the industry, including Toshimasa Nakayama and Tatsuhiko Shibuya. These partnerships have fostered a collaborative atmosphere that has led to groundbreaking discoveries and innovations in the field.

Conclusion

Yoshio Hagiwara exemplifies the spirit of innovation and ingenuity in semiconductor technology. His prolific patent portfolio reflects a deep understanding of material science and engineering principles, paving the way for future advancements in the industry. With his ongoing contributions, Hagiwara continues to inspire the next generation of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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