The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Aug. 24, 1999
Applicant:
Inventor:
Yoshio Hagiwara, Tokyo, JP;
Assignee:
Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method for suppressing the cutting of bonds between organic radical (for example, CH -radical) or H-radical and Si atom in SOG film during an ashing process, thereby maintaining a low dielectric constant, after wiring gutters are formed through etching on organic or inorganic SOG film of low dielectric constant using a patterned resist film(s) thereon as a mask, the resist film(s) is removed by treating with the ashing process by use of a plasma ashing apparatus of a sheet-fed down-stream type under an atmospheric pressure of 1.2 Torr, for example, and thereafter barrier metal is formed and Cu is filled into the wiring gutters, so as to form the wiring.