The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Feb. 19, 2004
Hiroyuki Iida, Kouza-gun, JP;
Kazuto Ohbuchi, Kanagawa, JP;
Atsushi Matsushita, Kouza-gun, JP;
Yoshio Hagiwara, Kita-ku, JP;
Hiroyuki Iida, Kouza-gun, JP;
Kazuto Ohbuchi, Kanagawa, JP;
Atsushi Matsushita, Kouza-gun, JP;
Yoshio Hagiwara, Kita-ku, JP;
Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;
Abstract
For suppressing decomposition of an organic group (for example, a CHgroup) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.