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For the Inventor, By the Inventor

Hyogo, Japan

Yoshikazu Miyawaki

This inventor holds 36 USPTO granted patents, primarily in Nonvolatile Semiconductor Memory. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp., Renesas Solutions Corporation. Active years: 1990-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Miyawaki. Retrieved from https://idiyas.com/inventor/yoshikazu-miyawaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 36

% Patents Active = 97.2

Average Co-Inventor Count = 4.1

ph-index = 19

Forward Citations = 996(Granted Patents)


Location History:

  • Hyogo-ken, JP (1996 - 1999)
  • Tokyo, JP (1999)
  • Hyogo, JP (1990 - 2006)

Company Filing History:

goldMedal33 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal2 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal1 out of 1 
 
Renesas Solutions Corporation
 patent
4. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2006

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Areas of Expertise:
Nonvolatile Memory
Semiconductor Memory Device
Data Erasing Method
High-Speed Read Function
Memory Transistor
Background Operation
Erase Time Reduction
Programmable Memory
Error Correcting Function
Voltage Generator
Row Redundancy Circuit
Memory Array Area
36 patents (USPTO):Explore Patents
1. 7002846 - Non-volatile semiconductor memory device with memory transistor (2006-02-21),
2. 6996006 - Semiconductor memory preventing unauthorized copying (2006-02-07),
3. 6567316 - Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device (2003-05-20),
4. 6515908 - Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same (2003-02-04),
5. 6515900 - Non-volatile memory with background operation function (2003-02-04),
6. 6483748 - Nonvolatile memory with background operation function (2002-11-19),
7. 6473345 - SEMICONDUCTOR MEMORY DEVICE WHICH CAN BE SIMULTANEOUSLY TESTED EVEN WHEN THE NUMBER OF SEMICONDUCTOR MEMORY DEVICES IS LARGE AND SEMICONDUCTOR WAFER ON WHICH THE SEMICONDUCTOR MEMORY DEVICES ARE FORMED (2002-10-29),
8. 6466508 - Semiconductor memory device having high-speed read function (2002-10-15),
9. 6388921 - Nonvolatile semiconductor memory device with improved reliability and operation speed (2002-05-14),
10. 6385086 - Nonvolatile semiconductor memory device capable of high speed generation of rewrite voltage (2002-05-07),
11. 6330192 - Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device (2001-12-11),
12. 6243292 - Nonvolatile semiconductor memory device capable of reducing memory array area (2001-06-05),
13. 6008674 - Semiconductor integrated circuit device with adjustable high voltage (1999-12-28),
14. 5959890 - Non-volatile semiconductor memory device (1999-09-28),
15. 5940283 - High voltage generating device having variable boosting capability (1999-08-17),

Title: Yoshikazu Miyawaki: Innovator in Semiconductor Memory Technology

Introduction

Yoshikazu Miyawaki, based in Hyogo, Japan, is a prolific inventor known for his contributions to semiconductor memory technology. With a remarkable portfolio of 36 patents, he has been at the forefront of innovation in non-volatile memory devices, ensuring advancements in data storage and security.

Latest Patents

Among his latest patents, two significant innovations stand out. The first is a non-volatile semiconductor memory device with memory transistor. This device enhances data writing processes by detecting the threshold voltage of a memory transistor, which is critical for flash memory functionality. By adjusting the write pulse signal using a step voltage instead of a fixed voltage, it minimizes variations in drain current, resulting in more efficient data management.

The second patent, titled semiconductor memory preventing unauthorized copying, introduces a dual memory mat system. This innovation provides an isolated memory area where sensitive data can be securely stored and protected from unauthorized access. A comparing circuit serves to validate security information, returning a status that indicates whether the memory has been compromised, thus ensuring the integrity of the semiconductor memory.

Career Highlights

Yoshikazu has had an illustrious career with prestigious companies, including Mitsubishi Electric Corporation and Renesas Technology Corporation. His work with these organizations has significantly enhanced the capabilities and security features of semiconductor technologies, establishing him as a leader in this vital field of innovation.

Collaborations

Throughout his career, Yoshikazu has collaborated with notable colleagues, including Takeshi Nakayama and Yasushi Terada. Their collective expertise has driven forward-thinking solutions and propelled advancements in semiconductor memory systems.

Conclusion

Yoshikazu Miyawaki's contributions to the field of semiconductor memory technology are invaluable. With a strong focus on improving data integrity and security, his patents reflect a deep understanding of the technological needs of the modern world. As he continues to innovate, his work will likely influence the future of data storage solutions significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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