The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Feb. 20, 1998
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A non-volatile semiconductor memory device comprises a bit line 402, a plurality of word lines 401 arranged to cross the bit line 402, a plurality of non-volatile memory cells 404 which are disposed at the crossing points of the bit line 402 and the word lines 401 and which have a drain 404a connected to the bit line 402 and a control gate 404f connected to the corresponding word line 401, and a word line potential applying means 300, 500 wherein in an ordinary reading mode, a selective potential is applied to a word line 401 selected from the plurality of word lines, while a non-selective potential, which is lower than the selective potential, is applied to unselected word lines 401 in response to an address signal, and in a prescribed mode, the selective potential is applied to a word line 401 selected from the plurality of word lines, while a prescribed potential, which is lower than the non-selective potential, is applied to the unselected word lines in response to an address signal.