Kanagawa, Japan

Yoshikazu Hiura


Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 66(Granted Patents)


Location History:

  • Yamanashi, JP (2010 - 2012)
  • Minami-alps, JP (2007 - 2013)
  • Kanagawa, JP (2012 - 2018)

Company Filing History:


Years Active: 2007-2018

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12 patents (USPTO):Explore Patents

Title: Innovations of Yoshikazu Hiura

Introduction

Yoshikazu Hiura is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on enhancing the efficiency and performance of electronic devices.

Latest Patents

Hiura's latest patents include advancements in semiconductor devices and power storage technologies. One notable patent describes a semiconductor device that consists of multiple layers, including a first layer with a first transistor and a third layer with a second transistor. The design incorporates a channel formation region made of single crystal semiconductor and oxide semiconductor, ensuring improved functionality. Another patent focuses on a power storage device that boasts high capacity, excellent cycle characteristics, and long lifetime. This device features a unique structure where layers of different materials are alternately stacked to optimize performance.

Career Highlights

Throughout his career, Hiura has been associated with Semiconductor Energy Laboratory Co., Ltd., where he has played a crucial role in developing innovative technologies. His expertise in semiconductor devices has positioned him as a key figure in the industry.

Collaborations

Hiura has collaborated with notable colleagues, including Kazuo Nishi and Hiroki Adachi, to further advance research and development in semiconductor technologies.

Conclusion

Yoshikazu Hiura's contributions to semiconductor technology and power storage devices highlight his innovative spirit and dedication to enhancing electronic performance. His work continues to influence the industry and pave the way for future advancements.

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