The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Sep. 14, 2012
Yoichiro Numasawa, Tokyo, JP;
Yasushi Maeda, Kanagawa, JP;
Yoshikazu Hiura, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Yoichiro Numasawa, Tokyo, JP;
Yasushi Maeda, Kanagawa, JP;
Yoshikazu Hiura, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.