The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Oct. 04, 2011
Yoshikazu Hiura, Kanagawa, JP;
Fumito Isaka, Kanagawa, JP;
Yoshikazu Hiura, Kanagawa, JP;
Fumito Isaka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.