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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10147747 B1

PDFFull Text
Date of Patent:
Dec. 04, 2018

Filed:

Aug. 12, 2015

Semiconductor device, manufacturing method thereof, and electronic device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atugi-shi, Kanagawa-ken, JP;

Inventors:

Satoshi Toriumi, Kanagawa, JP;

Yoshikazu Hiura, Kanagawa, JP;

Mai Sugikawa, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Asok K Sarkar

Assistant Examiner:

Dmitriy Yemelyanov

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 21/76801 (2013.01); H01L 21/76828 (2013.01); H01L 21/8258 (2013.01); H01L 23/53295 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×10atoms/cmand less than or equal to 1.0×10atoms/cm.

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