Mai Sugikawa

Title: Mai Sugikawa: Innovator in Semiconductor Technology

Introduction

Mai Sugikawa is a prominent inventor based in Isehara, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on developing advanced semiconductor devices that enhance electrical characteristics and manufacturing methods.

Latest Patents

Among her latest patents, Sugikawa has developed a semiconductor device that includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer contains a first transistor, while the third layer includes a second transistor. Notably, the channel formation region of the first transistor is made of a single crystal semiconductor, and the second transistor's channel formation region consists of an oxide semiconductor. The second layer is composed of a first insulating film, a second insulating film, and a conductive film that electrically connects the two transistors. Additionally, she has created a semiconductor device with stable electrical characteristics, which reduces oxygen vacancies in a metal oxide. This device features a gate electrode, a gate insulating film, and a passivation film that enhances its performance.

Career Highlights

Sugikawa is currently employed at Semiconductor Energy Laboratory Co., Ltd., where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the capabilities of electronic devices.

Collaborations

Some of her notable coworkers include Tadashi Nakano and Kosei Noda, with whom she collaborates on various projects within the semiconductor field.

Conclusion

Mai Sugikawa is a trailblazer in semiconductor technology, with a strong portfolio of patents that reflect her innovative spirit and dedication to advancing the industry. Her contributions are paving the way for future developments in electronic devices.