Semiconductor Energy Laboratory Co., Ltd.

Mai Sugikawa

Kosei Noda

Tadashi Nakano

Yoshikazu Hiura

Ryota Tajima

Mitsuhiro Ichijo

Kazutaka Kuriki

Satoshi Toriumi

Nobuhiro Inoue

A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77&#xd7;10atoms/cmand less than or equal to 1.0&#xd7;10atoms/cm.

Semiconductor device, manufacturing method thereof, and electronic device

A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

Semiconductor device

A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.

Electrode, power storage device, electronic device, and vehicle

Growing community of inventors

Isehara, Japan

Mai Sugikawa