Kobe, Japan

Yoshihisa Tawada

This inventor holds 54 USPTO granted patents, plus 5 CIPO patents, primarily in Organic Semiconductors (CPC class 1362). Top assignees: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha, Kanegafuchi Chemical Industry Co., Ltd., Kaneka Corporation. Active years: 1983-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihisa Tawada. Retrieved from https://idiyas.com/inventor/yoshihisa-tawada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 98.1

 

Average Co-Inventor Count = 3.1

ph-index = 16

Forward Citations = 869(Granted Patents)

Forward Citations (Not Self Cited) = 861(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kobe, Hyogo, JP (1983)
  • Oike-Miyamadai, Kita-Ku, Kobe, Hyogo, JP (1983)
  • Takatsuki, JP (1983)
  • Hyogo, JP (1990 - 1995)
  • Kobe, JP (1984 - 1996)
  • Otsu, JP (1998 - 2000)
  • Osaka, JP (1984 - 2015)

Company Filing History:


Years Active: 1983-2015

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Areas of Expertise:
Organic Semiconductor
Photovoltaic Device
Amorphous Solar Module
Flexible Photovoltaic
Semiconductor Sensor
Hydrogen Semiconductor
X-Ray Detector
Color Sensor
Solar Power Generation
Film Forming Process
Photoelectric Converter
Electric Discharge Machining
54 patents (USPTO):Explore Patents

Title: The Innovative Journey of Yoshihisa Tawada

Introduction: Yoshihisa Tawada, an accomplished inventor based in Kobe, Japan, has made significant contributions to the field of organic semiconductors. With a remarkable portfolio of 54 patents, his work continues to have a profound impact on technology and materials science.

Latest Patents: Among his most notable inventions is his recent patent concerning an organic semiconductor material featuring a neutral radical compound derived from a trioxotriangulene. This innovative semiconductor device includes a semiconductor layer interposed between two electrodes, in which the semiconductor layer contains the derivative, acting as an n-type semiconductor. The design allows the semiconductor layer to work in conjunction with a p-type layer to harness a photoelectric conversion effect. Characteristically, the device boasts a narrow band gap, exceptional light absorption capabilities in the infrared region, and superior carrier mobility.

Career Highlights: Tawada's career includes significant tenures at prominent companies such as Kanegafuchi Kagaku Kogyo and Kanegafuchi Chemical Industry. His expertise in the development of advanced materials has positioned him as a leader in the field, contributing to numerous breakthroughs throughout his career.

Collaborations: Throughout his journey, Tawada has worked alongside esteemed colleagues such as Kazunori Tsuge and Yoshihiro Hamakawa. Their collaborative efforts have further enriched his research and innovation pursuits, fostering a creative environment conducive to scientific advancement.

Conclusion: Yoshihisa Tawada's work exemplifies the spirit of innovation, showcasing how dedication and collaboration can lead to groundbreaking advancements in organic semiconductor technology. His contributions continue to inspire future generations of inventors and researchers, solidifying his legacy in the world of patents and inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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