The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1993
Filed:
Apr. 07, 1992
Applicant:
Inventors:
Hideo Yamagishi, Kobe, JP;
Akihiko Hiroe, Fujisawa, JP;
Hitoshi Nishio, Kobe, JP;
Keiko Miki, Kobe, JP;
Kazunori Tsuge, Kobe, JP;
Yoshihisa Tawada, Kobe, JP;
Assignee:
Kanegafuchi Kagaku Kogyo Kabushiki Kaisha, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257-2 ; 257 52 ; 257 53 ; 257 59 ; 257 55 ; 437101 ; 136258 ;
Abstract
Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.