Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Kanegafuchi Chemical Industry Co., Ltd.

Other

Kaneka Corporation

Shimadzu Corporation

Nishimura, Kunio

Nakayama, Takehisa

Tsuge, Kazunori

Tawada, Yoshihisa

Takada, Jun

Yamaguchi, Minori

Yoshihisa Tawada

Kazunori Tsuge

Yoshihiro Hamakawa

Minori Yamaguchi

Hideo Yamagishi

Takehisa Nakayama

Masataka Kondo

Kenji Kobayashi

Satoru Murakami

Jun Takada

Masanobu Izumina

Kenji Yamamoto

Akihiko Hiroe

Hitoshi Nishio

Akimine Hayashi

Keiko Miki

Keizo Asaoka

Kunio Nishimura

Akihiko Nakajima

Yoichi Hosokawa

Susumu Fukuda

Minoru Ushioda

Tomoyoshi Zenki

Kazuyoshi Mimura

Toshihito Endo

Tetsuro Yamamoto

Ryotaro Tsuji

Masaaki Yokoyama

Shozo Yanagida

Kazuo Saito

Itaru Hatano

Eiichi Yoshida

Seishiro Mizukami

Atsuo Ishikawa

Hiroshi Ogoshi

Yasushi Morita

Katsuhiko Hayashi

Yasunori Matsunari

Shinji Kuwamura

Masahiko Tai

Masahiko Hosomi

Takeo Okamoto

Nozomu Ikuchi

William A Nevin

Shigeo Akimoto

Masataka Konda

Keizou Asaoka

An organic semiconductor device according to the present invention includes a semiconductor layerinterposed between two electrodesand, and the semiconductor layercontains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layeracts as an n-type semiconductor and coacts with a p-type semiconductor layerto exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.

Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material

Developing roller

A developing apparatus of a toner delivery system by contacting a developer roller with an electrostatic latent image-carrying member eliminates a protective layer in the conventional concept from a surface of the developing roller, and provides a covering layer which is formed by adhering particles of toner or a material having electrical characteristics and mechanical characteristics equal to those of the toner on the surface of the developing roller. Those particles are adhered utilizing a surface tackiness of an elastomer layer itself which is a structural element of the developing roller.

A solar module made by the sequential stacking of a conducting metal oxide layer, an amorphous semiconductor layer, a back metal electrode, and a passivating resin layer on a transparent substrate, in which the passivating resin layer includes a water vapor barrier layer having a permeability to water vapor of not more than 1 g/m.sup.2 day measured at a thickness of 100 .mu.m, with the water vapor barrier layer being a polymer having a backbone consisting essentially of carbon and hydrogen. This barrier layer prevents the oxidation of the back metal electrode by water vapor, so that the stability of the module is improved in outdoor use.

Amorphous solar module having improved passivation

A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.

Flexible photovoltaic device

The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxide layer formation thereon. The switching material utilizes an abrupt change in photoelectric current as produced upon phase transition of SrTiO.sub.3 at a low temperature. The photoelectric switch or temperature switch utilizes the change in photoconduction spectrum upon irradiation of SrTiO.sub.3 with light in the 3 eV-5 eV ultraviolet region. A switch is available by varying the intensity of irradiating light thereby controlling the transition temperature.

Photoconductive material

Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.

Amorphous semiconductor, amorphous semiconductor device using hydrogen

This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.

Photovoltaic device

A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..multidot.cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.

In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

Light sensitive semiconductor device

A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

Position sensor and picture image input device

A semiconductor device producing method wherein a patterned transparent electrode, a patterned amorphous silicon semiconductor layer and a patterned backside electrode are formed on a substrate sequentially in this order, and the patterning of at least one of the amorphous silicon semiconductor layer and the backside electrode is carried out in a step of forming at least one of the amorphous silicon semiconductor layer and the backside electrode with a wire mask being brought into substantially close contact with a surface subjected to film forming and a step of removing a thin film formed at a region between the wire mask and the surface subjected to film forming in the forming step; and a film forming apparatus used in the producing method comprising a holder which holds a substrate having a surface subjected to film forming, a mechanism for fixing and positioning the substrate on the holder and a plurality of wires which are disposed on the film forming surface side of the substrate and are to be brought into substantially close contact with the film forming surface. The method and the apparatus enable the film forming operation and the patterning operation to be carried out simultaneously without lowering the characteristics of a solar cell.

Method of producing a semiconductor device using a wire mask having a

A semiconductor device having a transparent electrode comprising SnO.sub.2, at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.

Semiconductor device having a transparent electrode and amorphous

In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.

X ray detecting device

In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibited without mechanically dividing the semiconductor layer and without causing any significant decrease in sensor sensitivity.

Semiconductor image sensor

Growing community of inventors

Kobe, Japan

Yoshihisa Tawada