The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Nov. 25, 2009
Applicants:

Yasushi Morita, Kawanishi, JP;

Masaaki Yokoyama, Toyonaka, JP;

Shozo Yanagida, Kawanishi, JP;

Yoshihisa Tawada, Osaka, JP;

Kenji Yamamoto, Settsu, JP;

Ryotaro Tsuji, Osaka, JP;

Inventors:

Yasushi Morita, Kawanishi, JP;

Masaaki Yokoyama, Toyonaka, JP;

Shozo Yanagida, Kawanishi, JP;

Yoshihisa Tawada, Osaka, JP;

Kenji Yamamoto, Settsu, JP;

Ryotaro Tsuji, Osaka, JP;

Assignee:

Kaneka Corporation, Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0056 (2013.01); H01L 51/424 (2013.01); H01L 51/5012 (2013.01); H01L 51/5048 (2013.01); H01L 51/5088 (2013.01); Y02E 10/549 (2013.01); Y10S 428/917 (2013.01);
Abstract

An organic semiconductor device according to the present invention includes a semiconductor layerinterposed between two electrodesand, and the semiconductor layercontains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layeracts as an n-type semiconductor and coacts with a p-type semiconductor layerto exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.


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