Yoshihisa Iba

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Fujitsu Corporation, Fujitsu Semiconductor Limited. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihisa Iba. Retrieved from https://idiyas.com/inventor/yoshihisa-iba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 (Patent Applications = 1)

% Patents Active = 45.5

Average Co-Inventor Count = 1.1

ph-index = 2

Forward Citations = 46(Granted Patents)

Location History:

Shinjuku, JP (2010)
Kawasaki, JP (2005 - 2011)
Yokohama, JP (2011 - 2014)

Company Filing History:

Fujitsu Semiconductor Limited

patents

Years Active: 2005-2014

Loading Chart...

11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8828742 - Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer (2014-09-09),

2. 8421138 - Magnetic tunneling junction device with recessed magnetic free layer (2013-04-16),

3. 8026112 - Method of manufacturing semiconductor device (2011-09-27),

4. 8008197 - Method for manufacturing semiconductor device (2011-08-30),

5. 7772112 - Method of manufacturing a semiconductor device (2010-08-10),

6. 7473635 - Method for manufacturing semiconductor device (2009-01-06),

7. 7452795 - Semiconductor device and method for fabricating the same (2008-11-18),

8. 7378352 - Method of fabricating semiconductor device (2008-05-27),

9. 7196003 - Method for manufacturing a semiconductor device suitable for the formation of a wiring layer (2007-03-27),

10. 7189643 - Semiconductor device and method of fabricating the same (2007-03-13),

11. 6894369 - Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof (2005-05-17),

Title: The Innovative Contributions of Yoshihisa Iba

Introduction

Yoshihisa Iba is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of magnetoresistive effect elements, holding a total of 11 patents. His work has advanced the understanding and manufacturing processes of magnetic tunneling junction devices.

Latest Patents

One of his latest patents is a method of manufacturing a magnetoresistive effect element. This method includes forming an insulative sidewall metal oxide layer by sputtering particles of metal material from a patterned metal layer. The process involves several steps, including the formation of electrodes and magnetic layers, as well as the oxidation of the sidewall metal layer. Another notable patent is for a magnetic tunneling junction device with a recessed magnetic free layer. This invention features a unique structure that enhances the performance of magnetic free layers and includes a non-magnetic film that connects the two magnetic free layers.

Career Highlights

Yoshihisa Iba has worked with notable companies such as Fujitsu Corporation and Fujitsu Semiconductor Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in the field of magnetoresistive technologies.

Collaborations

Throughout his career, Iba has collaborated with talented individuals, including Kiyoshi Irino and Yusuke Morisaki. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Yoshihisa Iba's contributions to the field of magnetoresistive effect elements and magnetic tunneling junction devices have been invaluable. His innovative patents and collaborations with industry professionals highlight his significant impact on technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: