The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Mar. 29, 2002
Kiyoshi Irino, Kawasaki, JP;
Yusuke Morisaki, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Yoshiaki Tanida, Kawasaki, JP;
Yoshihisa Iba, Kawasaki, JP;
Kiyoshi Irino, Kawasaki, JP;
Yusuke Morisaki, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Yoshiaki Tanida, Kawasaki, JP;
Yoshihisa Iba, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.