The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8828742 B1

Expired

Date of Patent:

Sep. 09, 2014

Filed:

Nov. 07, 2011

Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer

Applicant:

Yoshihisa Iba, Yokohama, JP;

Inventor:

Yoshihisa Iba, Yokohama, JP;

Assignee:

Fujitsu Semiconductor Limited, Yokohama, JP;

Attorney:

Fujitsu Patent Center

Primary Examiner:

Stephen W Smoot

Int. Cl.

CPC ...

H01L 21/473 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);

U.S. Cl.

CPC ...

H01L 27/228 (2013.01); H01L 43/12 (2013.01); H01L 43/08 (2013.01);

Abstract

A method of manufacturing a magnetoresistive effect element includes forming a first electrode above a substrate, forming a metal layer of a metal material above the first electrode, forming a first magnetic layer above the metal layer, forming a tunnel insulating film above the first magnetic layer, forming a second magnetic layer above the tunnel insulating film, forming a second electrode layer above the second magnetic layer, patterning the second electrode layer, patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, while depositing sputtered particles of the metal film on side walls of the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer to form a sidewall metal layer, and oxidizing the sidewall metal layer to form an insulative sidewall metal oxide layer.

Find Patent Forward Citations

Iba, Yoshihisa. (2014). Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer (U.S. Patent No. 8828742). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8828742

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