The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Feb. 16, 2007
Yoshihisa Iba, Kawasaki, JP;
Yoshihisa Iba, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A four-layer structured hard mask composed of a SiC film, a first SiOfilm, a SiC film, and a second SiOfilm is formed on a porous silica film as an interlayer insulating film. Then, the second SiOfilm is etched with a resist mask. Subsequently, the SiC film is etched with the second SiOfilm. Thereafter, the first SiOfilm is etched with the SiC film. Subsequently, the SiC film is etched with the SiC film. Then, by etching the porous silica film with the SiC film, a wiring trench is formed. At this time, a selection ratio between the SiC film and the porous silica film is large, so that deformation of the SiC film rarely occurs, which prevents leakage caused by the deformation.