The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7772112 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 10, 2010

Filed:

Dec. 30, 2009
Applicant:

Yoshihisa Iba, Shinjuku, JP;

Inventor:

Yoshihisa Iba, Shinjuku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an insulating layer on an conductive layer; forming a first mask layer and a second mask layer on the insulating layer; forming a resist layer on the second mask layer; patterning the resist layer; patterning the second mask layer by using the resist layer as a mask; etching the first mask layer halfway through its thickness by using the resist layer and the second mask layer as a mask; removing the resist layer; etching a remaining portion of the first mask layer using the second mask layer as a mask; forming an interconnect groove by etching the insulating layer using the first mask layer as a mask; and forming an electrically conductive material into the interconnect groove, thereby forming an interconnect layer connected to the conductive layer.


Find Patent Forward Citations

Iba, Yoshihisa. (2010). Method of manufacturing a semiconductor device (U.S. Patent No. 7772112). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7772112

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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