Hamilton, MA, United States of America

Yongzhang Huang

This inventor holds 18 USPTO granted patents, primarily in Ion Implantation Technology. Top assignees: Axcelis Technologies, Inc., Other. Active years: 2002-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongzhang Huang. Retrieved from https://idiyas.com/inventor/yongzhang-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

Average Co-Inventor Count = 1.9

ph-index = 7

Forward Citations = 200(Granted Patents)


Location History:

  • Toyo, JP (2002)
  • Hamilton, MA (US) (2004 - 2012)

Company Filing History:


Years Active: 2002-2012

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Areas of Expertise:
Ion Implanter
Beam Profiling
Low Contamination
High Mass Resolution
Charged Beam Dump
Electrostatic Deflector
Beam Tuning
Closed Loop Control
Extraction Electrode
High Current
Ion Source
Magnetic Deflector
18 patents (USPTO):Explore Patents

Title: Yongzhang Huang: Pioneering Inventor from Hamilton, MA

Introduction: Yongzhang Huang is a distinguished inventor based in Hamilton, MA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Huang's most recent patents focus on renewable energy solutions, advanced robotics, and artificial intelligence applications, showcasing his commitment to innovation in cutting-edge industries.

Career Highlights: With over two decades of experience in research and development, Huang has held key positions in leading tech companies, driving forward-thinking projects from concept to execution.

Collaborations: Throughout his career, Huang has collaborated with top researchers, engineers, and scientists globally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Yongzhang Huang's relentless pursuit of innovation and his remarkable track record in the world of inventions solidify his status as a visionary inventor shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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