The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Feb. 21, 2003
Robert D. Rathmell, Murphy, TX (US);
Bo H. Vanderberg, Boston, MA (US);
Yongzhang Huang, Hamilton, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.