The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
May. 26, 2006
Que Weiguo, Melrose, MA (US);
Yongzhang Huang, Hamilton, MA (US);
John YE, Brighton, MA (US);
David Tao, Saugus, MA (US);
Patrick Splinter, Middleton, MA (US);
Que Weiguo, Melrose, MA (US);
Yongzhang Huang, Hamilton, MA (US);
John Ye, Brighton, MA (US);
David Tao, Saugus, MA (US);
Patrick Splinter, Middleton, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.