The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Mar. 08, 2005
Applicant:

Yongzhang Huang, Hamilton, MA (US);

Inventor:

Yongzhang Huang, Hamilton, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ignitable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.


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