The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Oct. 04, 2006
Yongzhang Huang, Hamilton, MA (US);
Brian S. Freer, Medford, MA (US);
John YE, Brighton, MA (US);
Christopher Godfrey, Rowley, MA (US);
Michael A. Graf, Belmont, MA (US);
Patrick Splinter, Middleton, MA (US);
Yongzhang Huang, Hamilton, MA (US);
Brian S. Freer, Medford, MA (US);
John Ye, Brighton, MA (US);
Christopher Godfrey, Rowley, MA (US);
Michael A. Graf, Belmont, MA (US);
Patrick Splinter, Middleton, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.