Tainan, Taiwan

Yong-Shiuan Tsair

This inventor holds 58 USPTO granted patents and 12 published patent applications, primarily in Embedded Memory Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong-Shiuan Tsair. Retrieved from https://idiyas.com/inventor/yong-shiuan-tsair

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 58 

% Patents Active = 93.1

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 148(Granted Patents)

Forward Citations (Not Self Cited) = 118(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu, TW (2019)
  • Tainan, TW (2010 - 2024)

Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
Polysilicon Resistor Structures
Embedded Ferroelectric Memory Cell
Memory Device
High Voltage Transistor
Strap-Cell Architecture
Floating Gate Test Structure
Integrated Circuit
Semiconductor Device
RRAM Structure
Device-Region Layout
Memory Structure
58 patents (USPTO):Explore Patents

Title: Yong-Shiuan Tsair: Pioneer in Memory Device Innovations

Introduction

Yong-Shiuan Tsair is a distinguished inventor based in Tainan, Taiwan, with an impressive portfolio of 56 patents to his name. He has significantly contributed to the field of semiconductor technology, particularly in memory devices and integrated circuits. His work continues to influence advancements in electronics and computational systems.

Latest Patents

Tsair's latest innovations include a groundbreaking memory device that features two memory stacks positioned over a single bottom electrode. This innovative design comprises a first bottom electrode with interconnected first and second portions, where the first memory stack consists of a resistive switching element topped with a first electrode. The second memory stack, similarly structured, is positioned over the second portion.

Additionally, he has developed a method for fabricating integrated circuits, which entails depositing a dielectric layer over a conductive feature, followed by etching an opening to facilitate the deposition of a bottom electrode layer and a resistance switch layer. This method ensures that the sidewalls of the bottom electrode align precisely with the tapered edges of the dielectric, showcasing his technical expertise and forward-thinking approach in semiconductor fabrication.

Career Highlights

Yong-Shiuan Tsair currently works at Taiwan Semiconductor Manufacturing Company Ltd., one of the world’s leading semiconductor manufacturers. His role has enabled him to push the boundaries of technological innovation, resulting in significant contributions to modern electronic devices and memory technology.

Collaborations

Throughout his career, Tsair has collaborated closely with fellow researchers and coworkers, including Wen-Tuo Huang and Po-Wei Liu. These partnerships have fostered a collaborative environment that enhances creativity and leads to groundbreaking developments in the semiconductor field.

Conclusion

Yong-Shiuan Tsair's contributions to the realm of memory devices and integrated circuits have positioned him as a notable figure in the tech industry. With his extensive patent portfolio and influential collaborations, Tsair continues to pave the way for future innovations in semiconductor technology, solidifying his reputation as a leading inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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