The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Jul. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tzu-Yu Chen, Kaohsiung, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Yong-Shiuan Tsair, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to an integrated chip structure. The integrated chip structure includes a first source/drain region and a second source/drain region disposed within a substrate. A select gate is disposed over the substrate between the first source/drain region and the second source/drain region. A ferroelectric random-access memory (FeRAM) device is disposed over the substrate between the select gate and the first source/drain region. A first sidewall spacer, including one or more dielectric materials, is arranged laterally between the select gate and the FeRAM device. An inter-level dielectric (ILD) structure laterally surrounds the FeRAM device and the select gate and vertically overlies a top surface of the first sidewall spacer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile