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For the Inventor, By the Inventor

San Jose, CA, United States of America

Yong Cao

LinkedIn
USPTO Granted Patents = 49 

Average Co-Inventor Count = 5.8

ph-index = 5

Forward Citations = 96(Granted Patents)


Company Filing History:

goldMedal49 out of 13,713 
 
Applied Materials, Inc.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Physical Vapor Deposition
Metal Nitrides
Superconductive Films
Dielectric Barrier Layers
Amorphous Silicon Layers
Subtractive Self-Alignment
Optical Stack Deposition
Interconnect Structures
Particle Reduction
High Density TiN Deposition
Light Wave Separation Lattices
PVD Sputtering Systems
49 patents (USPTO):Explore Patents
1. D1072774 - Target profile for a physical vapor deposition chamber target (2025-04-29),
2. 12185643 - High critical temperature metal nitride layer with oxide or oxynitride seed layer (2024-12-31),
3. 12183560 - Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process (2024-12-31),
4. 12176205 - Method and chamber for backside physical vapor deposition (2024-12-24),
5. 12142478 - Method and chamber for backside physical vapor deposition (2024-11-12),
6. 12096701 - Method of making high critical temperature metal nitride layer (2024-09-17),
7. 12052935 - Method of making high critical temperature metal nitride layer (2024-07-30),
8. 12027354 - Cleaning of SIN with CCP plasma or RPS clean (2024-07-02),
9. 11915918 - Cleaning of sin with CCP plasma or RPS clean (2024-02-27),
10. 11908696 - Methods and devices for subtractive self-alignment (2024-02-20),
11. 11802349 - Method for depositing high quality PVD films (2023-10-31),
12. 11778926 - Method and apparatus for deposition of multilayer device with superconductive film (2023-10-03),
13. 11739418 - Method and apparatus for deposition of metal nitrides (2023-08-29),
14. 11678589 - Method of making high critical temperature metal nitride layer (2023-06-13),
15. 11600761 - High critical temperature metal nitride layer with oxide or oxynitride seed layer (2023-03-07),

Title: The Innovative Journey of Yong Cao

Introduction: Yong Cao, a talented inventor based in San Jose, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Yong Cao's recent patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge solutions for renewable energy storage systems.

Career Highlights: With a background in electrical engineering, Yong Cao has worked for leading tech companies in Silicon Valley, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Yong Cao has collaborated with top researchers from renowned universities and research institutions, fostering a culture of innovation and excellence in his work.

Conclusion: Yong Cao's dedication to pushing the boundaries of technology and his passion for creating impactful inventions continue to inspire the next generation of inventors and innovators.

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