Applied Materials, Inc.

Yong Cao

Xianmin Tang

Shane Lavan

Daniel Lee Diehl

Mingwei Zhu

Nag B Patibandla

Zihao Yang

Yana Cheng

Mehul B Naik

He Ren

Zhebo Chen

Weimin Zeng

Jothilingam Ramalingam

Thanh X Nguyen

Kevin Vincent Moraes

Rongjun Wang

Kirankumar Neelasandra Savandaiah

Mohammad Kamruzzaman Chowdhury

Shriram Mangipudi

Srinivas Guggilla

Weifeng Ye

Sree Rangasai V Kesapragada

Chunming Zhou

Ludovic Godet

Deenesh Padhi

Muhammad M Rasheed

Tza-Jing Gung

Huixiong Dai

Mei-Yee Shek

Tingjun Xu

Sundarapandian Ramalinga Vijayalakshmi Reddy

Randal Dean Schmieding

Mingdong Li

David P Thompson

Srinivas Gandikota

John C Forster

Christopher Dennis Bencher

Paul F Ma

Keith A Miller

Wei D Wang

Ananthkrishna Jupudi

Jianxin Lei

Ilya Lavitsky

Zhendong Liu

Hao Jiang

Wenting Hou

Peng Xie

Randy D Schmieding

Wei Dou

Chen Gong

Khoi A Phan

Chi-I Lang

Todd J Egan

Suketu Arun Parikh

Adolph Miller Allen

Fuhong Zhang

Sriskantharajah Thirunavukarasu

Christopher S Ngai

Kazuya Daito

Edward W Budiarto

William R Johanson

Chi Hong Ching

Alexander Jansen

Tejinder Singh

Karthik Elumalai

Michael Anthony Stolfi

Madan Kumar Shimoga Mylarappa

Rajkumar Jakkaraju

Xiaozhou Che

Sree Rangasai Kesapragada

Chao Du

Lifan Yan

Niranjan Ramchandra Khasgiwale

Chengyu Liu

Hoyung David Hwang

Zhefeng Li

Thean Ming Tan

Jean Lu

Shumao Zhang

Avinash Nayak

Renjing Zheng

Surender Kumar Gurusamy

Tai-chou Papo Chen

Tai-Chou Papo Chen

Target profile for a physical vapor deposition chamber target

Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

High critical temperature metal nitride layer with oxide or oxynitride seed layer

Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Method and chamber for backside physical vapor deposition

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Method of making high critical temperature metal nitride layer

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Cleaning of SIN with CCP plasma or RPS clean

Cleaning of sin with CCP plasma or RPS clean

A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.

Methods and devices for subtractive self-alignment

Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

Method for depositing high quality PVD films

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8&#xb0; K on the buffer layer, and a capping layer, respectively.

Method and apparatus for deposition of multilayer device with superconductive film

A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

Method and apparatus for deposition of metal nitrides

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San Jose, CA, United States of America

Yong Cao