Yoichi Miyai

This inventor holds 19 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: Texas Instruments Corporation. Active years: 1994-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoichi Miyai. Retrieved from https://idiyas.com/inventor/yoichi-miyai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 154(Granted Patents)

Location History:

Ibaraki, JP (1995 - 1998)
Toride, JP (1994 - 2003)
Kodaira, JP (2001 - 2004)

Company Filing History:

19 out of 29,973

Texas Instruments Corporation

patents

Years Active: 1994-2004

Loading Chart...

Areas of Expertise:

DRAM Cell

Stacked Capacitor

Integrated Circuit

Memory Device

Conductive Elements

Chip Yield

Trench-Type

Self-Aligned Contact

Interconnection

Semiconductor Fabrication

Storage Node Contacts

Non-Corrosive Fuse

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6797563 - Method of forming cross point type DRAM cell (2004-09-28),

2. 6657308 - Method for forming a self-aligned contact (2003-12-02),

3. 6580112 - Method for fabricating an open can-type stacked capacitor on an uneven surface (2003-06-17),

4. 6563155 - Cross point type DRAM cell composed of a pillar having an active region (2003-05-13),

5. 6362506 - Minimization-feasible word line structure for DRAM cell (2002-03-26),

6. 6291293 - Method for fabricating an open can-type stacked capacitor on an uneven surface (2001-09-18),

7. 6245664 - Method and system of interconnecting conductive elements in an integrated circuit (2001-06-12),

8. 6204118 - Method for fabrication an open can-type stacked capacitor on local topology (2001-03-20),

9. 6184080 - Method of the simultaneous formation for the storage node contacts, bit line contacts, and the contacts for periphery circuits (2001-02-06),

10. 6004870 - Method for forming a self-aligned contact (1999-12-21),

11. 5861649 - Trench-type semiconductor memory device (1999-01-19),

12. 5754432 - Apparatus and method for estimating chip yield (1998-05-19),

13. 5734184 - DRAM COB bit line and moat arrangement (1998-03-31),

14. 5641701 - Method for fabricating a semiconductor device with laser programable (1997-06-24),

15. 5618750 - Method of making fuse with non-corrosive termination of corrosive fuse (1997-04-08),

Title: The Innovations of Yoichi Miyai: Pioneering Advancements in Semiconductor Technology

Introduction: Yoichi Miyai, a distinguished inventor based in Toride, Japan, has made significant contributions to the field of semiconductor technology, accumulating a remarkable portfolio of 19 patents. His innovative work primarily revolves around the development of dynamic random access memory (DRAM) devices, demonstrating a strong commitment to enhancing memory technology and manufacturing processes.

Latest Patents: Among his notable patents, the latest inventions include a "Method of Forming Cross Point Type DRAM Cell" and a "Method for Forming a Self-Aligned Contact." The first invention outlines a DRAM device design that incorporates a substrate with parallel word and bit lines, creating memory cells through intersections. These cells feature a semiconductor pillar that supports innovative plug structures, simplifying fabrication with only four masks. The second patent focuses on an advanced approach for creating contact wells in semiconductor devices, utilizing a non-hazardous selective etchant that results in devices with lower parasitic gate capacitance, enhanced switching speeds, and improved power efficiency.

Career Highlights: Yoichi Miyai currently works at Texas Instruments Corporation, where he continues to push the envelope in semiconductor innovation. His expertise has played a vital role in developing cutting-edge technologies that drive advancements in memory devices, benefiting various applications across the electronics industry.

Collaborations: Throughout his career, Miyai has collaborated with renowned coworkers such as Katsushi Boku and Toshiyuki Nagata. Working alongside talented professionals has undoubtedly enriched his research endeavors and contributed to the successful development of his patents.

Conclusion: Yoichi Miyai's contributions to the field of semiconductor technology through his innovative patents have positioned him as a leading inventor in his domain. His work at Texas Instruments Corporation and collaborations with esteemed colleagues emphasize his influence on the future of memory technology, paving the way for continued advancements in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]