The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Aug. 23, 1999
Yoichi Miyai, Kodaira, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A word line structure for a dynamic random access memory (DRAM) cell comprises a generally planar substrate and a plurality of mesa-shaped active regions formed on the substrate and protruding outwardly a given distance therefrom. Each of the mesa-shaped active regions has two word-line-receiving regions formed within it. A plurality of substantially straight and parallel word lines are also included; two of the plurality of word lines are embedded in the two word-line-receiving regions formed in each of the mesa-shaped active regions. The inner surfaces of the word lines are located inwardly of the outer surfaces of the mesa-shaped active regions. The structure further includes an insulation layer positioned on the substrate and which forms a plurality of isolation regions between the plurality of mesa-shaped active regions. At a given boundary formed by a given one of the active regions, isolation regions, and word lines, the outer edges of the isolation regions are located outwardly from the floor portions of the word line regions which are formed in the outer surfaces of the mesa-shaped active regions.