The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Aug. 12, 1999
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
An open can-type stacked capacitor is fabricated on local topology by forming a conductive layer (,) outwardly of an insulator (,) and an access line (,) extending from the insulator (,). A mask (,) is formed outwardly of the conductive layer (,). A first electrode (,) is formed by removing at least part of the conductive layer (,) exposed by the mask (,). The first electrode (,) includes an annular sidewall (,) having a first segment (,) disposed on the insulator (,) and a second, opposite segment (,) disposed on the access line (,). A dielectric layer (,) is formed outwardly of the first electrode (,). A second electrode (,) is formed outwardly of the dielectric layer (,).