The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Sep. 13, 1999
Yoichi Miyai, Toride, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An improved method for forming a contact well for a semiconductor device ( ) is disclosed. According to this method, a first insulator layer ( ) comprising an insulating material is formed around a gate ( ). A contact well filler ( ) is then formed adjoining the first insulator layer ( ). A second insulator layer ( ) comprising the insulating material is formed around the first insulator layer ( ) and the contact well filler ( ). The contact well filler ( ) is then removed to form the contact well ( ) in the second insulator layer ( ). This method allows the use a non-hazardous selective etchant to form the contact well. The semiconductor device ( ) formed in accordance with the present invention also exhibits low parasitic gate capacitance, high switching speed and low power consumption.