Growing community of inventors

Toride, Japan

Yoichi Miyai

Average Co-Inventor Count = 1.99

ph-index = 7

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 154

Yoichi MiyaiKatsushi Boku (6 patents)Yoichi MiyaiHiroyuki Yoshida (5 patents)Yoichi MiyaiToshiyuki Nagata (5 patents)Yoichi MiyaiYoshihiro Ogata (4 patents)Yoichi MiyaiMasayuki Moroi (4 patents)Yoichi MiyaiTakayuki Niuya (3 patents)Yoichi MiyaiHideyuki Fukuhara (3 patents)Yoichi MiyaiDavid J McElroy (1 patent)Yoichi MiyaiOsaomi Enomoto (1 patent)Yoichi MiyaiHiroyuki Kurino (1 patent)Yoichi MiyaiKatsuyoshi Andoh (1 patent)Yoichi MiyaiYoshinobu Yoneoka (1 patent)Yoichi MiyaiTakao Komatsuzaki (1 patent)Yoichi MiyaiYoichi Miyai (19 patents)Katsushi BokuKatsushi Boku (8 patents)Hiroyuki YoshidaHiroyuki Yoshida (60 patents)Toshiyuki NagataToshiyuki Nagata (16 patents)Yoshihiro OgataYoshihiro Ogata (9 patents)Masayuki MoroiMasayuki Moroi (7 patents)Takayuki NiuyaTakayuki Niuya (8 patents)Hideyuki FukuharaHideyuki Fukuhara (7 patents)David J McElroyDavid J McElroy (68 patents)Osaomi EnomotoOsaomi Enomoto (3 patents)Hiroyuki KurinoHiroyuki Kurino (3 patents)Katsuyoshi AndohKatsuyoshi Andoh (2 patents)Yoshinobu YoneokaYoshinobu Yoneoka (1 patent)Takao KomatsuzakiTakao Komatsuzaki (1 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Texas Instruments Corporation (19 from 29,232 patents)


19 patents:

1. 6797563 - Method of forming cross point type DRAM cell

2. 6657308 - Method for forming a self-aligned contact

3. 6580112 - Method for fabricating an open can-type stacked capacitor on an uneven surface

4. 6563155 - Cross point type DRAM cell composed of a pillar having an active region

5. 6362506 - Minimization-feasible word line structure for DRAM cell

6. 6291293 - Method for fabricating an open can-type stacked capacitor on an uneven surface

7. 6245664 - Method and system of interconnecting conductive elements in an integrated circuit

8. 6204118 - Method for fabrication an open can-type stacked capacitor on local topology

9. 6184080 - Method of the simultaneous formation for the storage node contacts, bit line contacts, and the contacts for periphery circuits

10. 6004870 - Method for forming a self-aligned contact

11. 5861649 - Trench-type semiconductor memory device

12. 5754432 - Apparatus and method for estimating chip yield

13. 5734184 - DRAM COB bit line and moat arrangement

14. 5641701 - Method for fabricating a semiconductor device with laser programable

15. 5618750 - Method of making fuse with non-corrosive termination of corrosive fuse

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as of
12/8/2025
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