The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
May. 15, 2001
Yoichi Miyai, Toride, JP;
Masayuki Moroi, Richardson, TX (US);
Katsushi Boku, Ami-machi, JP;
Toshiyuki Nagata, Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An open can-type stacked capacitor is fabricated by forming a conductive layer ( ) outwardly of a substantially uneven surface ( ). A step ( ) is formed in an outer surface ( ) of the conductive layer ( ). A base ( ) of a first electrode ( ) is formed by removing a predetermined thickness ( ) of at least part of the conductive layer ( ). The base ( ) is made of a portion of the conductive layer ( ) underlying the step ( ) by the predetermined thickness ( ). A sidewall ( ) of the first electrode ( ) is formed. A dielectric layer ( ) is formed outwardly of the first electrode ( ). A second electrode ( ) of the capacitor is formed outwardly of the dielectric layer ( ).