Tainan, Taiwan

Ying Ming Wang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018-2024

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4 patents (USPTO):

Title: Innovations of Ying Ming Wang in Semiconductor Technology

Introduction

Ying Ming Wang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advancing the design and manufacturing processes of semiconductor devices.

Latest Patents

One of his latest patents is titled "Gate structure of semiconductor device and method of forming same." This invention provides a method for forming a semiconductor device that includes creating a fin extending from a substrate. A sacrificial gate electrode layer is formed along the sidewall and top surface of the fin. A patterning process is then performed on this layer to create a sacrificial gate electrode. Following this, a reshaping process is conducted to form a reshaped sacrificial gate electrode, which consists of a first portion along the top surface of the fin and a second portion along the sidewall. The widths of both portions decrease as they extend towards the substrate, enhancing the device's performance.

Career Highlights

Ying Ming Wang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Ying Ting Hsia and Kun Yu Lin, contributing to various projects that push the boundaries of semiconductor innovation.

Conclusion

Ying Ming Wang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of semiconductor devices.

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