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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10930783 B1

PDFFull Text
Date of Patent:
Feb. 23, 2021

Filed:

Nov. 07, 2018

Semiconductor devices, finfet devices with optimized strained source-drain recess profiles and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ying Ting Hsia, Kaohsiung, TW;

Kun Yu Lin, Kaohsiung, TW;

Ying Ming Wang, Tainan, TW;

Li-Te Hsu, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Sue A Purvis

Assistant Examiner:

Scott Stowe

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01);
Abstract

Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Find Patent Forward Citations

Hsia, Ying. (2021). Semiconductor devices, finfet devices with optimized strained source-drain recess profiles and methods of forming the same (U.S. Patent No. 10930783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10930783

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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