The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 19, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yuan Tsung Tsai, Tainan City, TW;
Yao Jui Kuo, Tainan City, TW;
Chia-Wei Fan, Tainan City, TW;
Ying Ming Wang, Tainan City, TW;
Shih-Hao Chen, Hsinchu County, TW;
Ling-Sung Wang, Tainan City, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/024 (2025.01); H10D 30/6219 (2025.01);
Abstract
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first fin and a gate electrode. The first fin extends along a first direction. The gate electrode has a sidewall extending along a second direction different from the first direction. The sidewall of the gate electrode defines an indentation adjacent to the first fin in a top view.