Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying Ming Wang

Ru-Shang Hsiao

Li-Te Hsu

Ying Ting Hsia

Ying Hsin Lu

Kun Yu Lin

A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Gate structure of semiconductor device and method of forming same

Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Semiconductor devices, FinFET devices with optimized strained source-drain recess profiles and methods of forming the same

Semiconductor devices FinFET devices with optimized strained-sourece-drain recess profiles and methods of forming the same

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Tainan, Taiwan

Ying Ming Wang