For the Inventor, By the Inventor

Enter inventor name

Hsinchu, Taiwan

Ying-Keung Leung

USPTO Granted Patents = 93 (Patent Applications = 8)

Average Co-Inventor Count = 4.0

ph-index = 11

Forward Citations = 2,136(Granted Patents)

Forward Citations (Not Self Cited) = 2,071(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu County, TW (2018 - 2020)
Hong Kong, CN (2006 - 2022)
Hsinchu, TW (2010 - 2024)

Company Filing History:

91 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Parabellum Strategic Opportunities Fund LLC

1 out of 832,843

Other

patents

Years Active: 2006-2025

Loading Chart...

Areas of Expertise:

Transistors

FinFETs

Bipolar Junction Transistor

Multi-Gate Device

Gate-All-Around Semiconductor

Silicide Technology

Semiconductor Device

Source/Drain Regions

Integrated Circuit

Oxide Structures

Channel Isolation

Device Fabrication

93 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12453116 - Transistors with stacked channels and the methods of forming the same (2025-10-21),

2. 12336261 - Contacts for highly scaled transistors (2025-06-17),

3. 12324210 - Bipolar junction transistor with gate over terminals (2025-06-03),

4. 12148669 - Semiconductor device with S/D bottom isolation and methods of forming the same (2024-11-19),

5. 12142635 - Gate all-around semiconductor device (2024-11-12),

6. 12068383 - Wrap around silicide for FinFETs (2024-08-20),

7. 12051729 - Bipolar junction transistor with gate over terminals (2024-07-30),

8. 12034077 - Method of forming source/drain regions with expanded widths (2024-07-09),

9. 11972981 - FinFET channel on oxide structures and related methods (2024-04-30),

10. 11961892 - Contacts for highly scaled transistors (2024-04-16),

11. 11955554 - Method of fabricating a multi-gate device (2024-04-09),

12. 11942548 - Multi-gate device and method of fabrication thereof (2024-03-26),

13. 11929417 - Contacts for highly scaled transistors (2024-03-12),

14. 11894275 - FinFET device having oxide region between vertical fin structures (2024-02-06),

15. 11855155 - Semiconductor device having contact feature and method of fabricating the same (2023-12-26),

Title: The Innovative Journey of Inventor Ying-Keung Leung

Introduction: Ying-Keung Leung, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Ying-Keung Leung holds several patents in the areas of semiconductor technology and renewable energy solutions, showcasing his commitment to driving progress through innovation.

Career Highlights: With a career spanning over two decades, Ying-Keung Leung has worked with leading tech companies in Taiwan, honing his skills and expertise in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Ying-Keung Leung has collaborated with top researchers and engineers, fostering a culture of innovation and pushing the boundaries of what is possible in the world of technology.

Conclusion: Ying-Keung Leung's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology and inspiring the next generation of innovators.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…