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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ying-Keung Leung

This inventor holds 94 USPTO granted patents and 8 published patent applications, primarily in FinFET Technology (CPC class H01L29-66545). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Parabellum Strategic Opportunities Fund LLC, Other. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-Keung Leung. Retrieved from https://idiyas.com/inventor/ying-keung-leung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 94 

% Patents Active = 92.6

Average Co-Inventor Count = 4.0

ph-index = 11

Forward Citations = 2,246(Granted Patents)

Forward Citations (Not Self Cited) = 2,071(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Hsinchu County, TW (2018 - 2020)
  • Hong Kong, CN (2006 - 2022)
  • Hsinchu, TW (2010 - 2024)

Company Filing History:

goldMedal92 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 15 
 
Parabellum Strategic Opportunities Fund LLC
 patents
bronzeMedal1 out of 834,513 
Other
 patents

Years Active: 2006-2026

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Areas of Expertise:
FinFET Device
Multi-Gate Device
Bipolar Junction Transistor
Channel Structure
Stacked Channels
Source/Drain Isolation
Gate All-Around
Silicide Technology
Transistor Fabrication
Integrated Circuit
Thermal Management
Epitaxial Layer
94 patents (USPTO):Explore Patents
1. 12520568 - Channel structure for FinFET device (2026-01-06),
2. 12453116 - Transistors with stacked channels and the methods of forming the same (2025-10-21),
3. 12336261 - Contacts for highly scaled transistors (2025-06-17),
4. 12324210 - Bipolar junction transistor with gate over terminals (2025-06-03),
5. 12148669 - Semiconductor device with S/D bottom isolation and methods of forming the same (2024-11-19),
6. 12142635 - Gate all-around semiconductor device (2024-11-12),
7. 12068383 - Wrap around silicide for FinFETs (2024-08-20),
8. 12051729 - Bipolar junction transistor with gate over terminals (2024-07-30),
9. 12034077 - Method of forming source/drain regions with expanded widths (2024-07-09),
10. 11972981 - FinFET channel on oxide structures and related methods (2024-04-30),
11. 11961892 - Contacts for highly scaled transistors (2024-04-16),
12. 11955554 - Method of fabricating a multi-gate device (2024-04-09),
13. 11942548 - Multi-gate device and method of fabrication thereof (2024-03-26),
14. 11929417 - Contacts for highly scaled transistors (2024-03-12),
15. 11894275 - FinFET device having oxide region between vertical fin structures (2024-02-06),

Title: The Innovative Journey of Inventor Ying-Keung Leung

Introduction: Ying-Keung Leung, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Ying-Keung Leung holds several patents in the areas of semiconductor technology and renewable energy solutions, showcasing his commitment to driving progress through innovation.

Career Highlights: With a career spanning over two decades, Ying-Keung Leung has worked with leading tech companies in Taiwan, honing his skills and expertise in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Ying-Keung Leung has collaborated with top researchers and engineers, fostering a culture of innovation and pushing the boundaries of what is possible in the world of technology.

Conclusion: Ying-Keung Leung's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology and inspiring the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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